? 2002 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 500 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c21a i dm t c = 25 c, pulse width limited by t jm 84 a i ar t c = 25 c21a e ar t c = 25 c35mj e as t c = 25 c 1.5 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 10 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.063 in.) from case for 10 s 300 c m d mounting torque to-247 1.13/10 nm/lb.in. weight to-247 6 g to-268 4 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 1ma 500 v v gs(th) v ds = v gs , i d = 4ma 3.0 5.5 v i gss v gs = 20 v, v ds = 0 100 na i dss v ds = v dss 50 a v gs = 0 v t j = 125 c 1.5 ma r ds(on) v gs = 10 v, i d = 0.5 i d25 250 m ? note 1 98884 (1/02) advance technical information hiperrf tm power mosfets f-class: megahertz switching n-channel enhancement mode avalanche rated, low q g , low intrinsic r g high dv/dt, low t rr features rf capable mosfets double metal process for low gate resistance unclamped inductive switching (uis) rated low package inductance - easy to drive and to protect fast intrinsic rectifier applications dc-dc converters switched-mode and resonant-mode power supplies, >500khz switching dc choppers 13.5 mhz industrial applications pulse generation laser drivers rf amplifiers advantages space savings high power density to-247 ad (ixfh) (tab) g = gate,d = drain, s = source,tab = drain to-268 (ixft) case style (tab) g s ixfh 21n50f ixft 21n50f v dss = 500 v i d25 = 21a r ds(on) = 250m ? ? ? ? ? t rr 250 ns
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 note 1 12 17 s c iss 2600 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 470 pf c rss 160 pf t d(on) 16 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 12 ns t d(off) r g = 2.0 ? (external) 36 ns t f 7.7 ns q g(on) 77 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 21 nc q gd 40 nc r thjc 0.42 k/w r thck (to-247) 0.25 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 21 a i sm repetitive; 84 a pulse width limited by t jm v sd i f = i s , v gs = 0 v, note 1 1.5 v t rr 250 ns q rm 1.2 c i rm 10 a i f = i s ,-di/dt = 100 a/ s, v r = 100 v note: 1. pulse test, t 300 s, duty cycle d 2 % ixfh 21n50f ixft 21n50f to-247 ad outline dim. millimeter i nches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc terminals: 1 - gate 2 - drain 3 - source tab - drain 1 2 3 to-268 outline dim. millimeter inches min. max. min. max. a 4.9 5.1 .193 .201 a 1 2.7 2.9 .106 .114 a 2 .02 .25 .001 .010 b 1.15 1.45 .045 .057 b 2 1.9 2.1 .75 .83 c .4 .65 .016 .026 d 13.80 14.00 .543 .551 e 15.85 16.05 .624 .632 e 1 13.3 13.6 .524 .535 e 5.45 bsc .215 bsc h 18.70 19.10 .736 .752 l 2.40 2.70 .094 .106 l1 1.20 1.40 .047 .055 l2 1.00 1.15 .039 .045 l3 0.25 bsc .010 bsc l4 3.80 4.10 .150 .161 min recommended footprint
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